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LARGE-SIGNAL RESISTANCE OF IMPATT DIODES OBTAINED FROM RF-POWER TO DC-CURRENT CHARACTERISTICS.DETLEFSEN J; SCHUCK WD.1974; NACHR.-TECH. Z.; DTSCH.; DA. 1974; VOL. 27; NO 7; PP. 280-282; ABS. ALLEM.; BIBL. 9 REF.Article

UN AMPLIFICATEUR A DEUX ETAGES AVEC DIODES IMPATT.WILLING HA.1974; J. TELECOMMUNIC.; SUISSE; DA. 1974; VOL. 41; NO 7; PP. 439-445; BIBL. 4 REF.Article

A LOW-NOISE 80-GHZ SILICON IMPATT OSCILLATOR HIGHLY STABILIZED WITH A TRANSMISSION CAVITY.NAGANO S; OHNAKA S.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 12 PART. 2; PP. 1152-1159; BIBL. 19 REF.Article

FM NOISE MEASUREMENT OF W-BAND IMPATT DIODES WITH A QUASIOPTICAL DIRECT DETECTION SYSTEMHARTH W; LEISTNER D; FREYER J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 355-356; BIBL. 5 REF.Article

A 63-W W-BAND INJECTION-LOCKED PULSED SOLID-STATE TRANSMITTERHUAN CHUN YEN; KAI CHANG.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 12; PP. 1292-1297; BIBL. 6 REF.Article

THE IMPATT STORY.DE LOACH BC JR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 7; PP. 657-660; BIBL. 14 REF.Article

EFFECT OF HEAVIER DOPED JUNCTION SIDE ON EFFICIENCY OF SI IMPATT DIODES.VOLLMANN E.1975; PROC. I.E.E.E.; U.S.A.; DA. 1975; VOL. 63; NO 8; PP. 1615-1617; BIBL. 11 REF.Article

FREQUENCY CHARACTERISTICS OF IMPATTS.HIRACHI Y; TOYAMA Y; SHINODA M et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 3; PP. 105-122; BIBL. 9 REF.Article

NEW CONCEPTS IN IMPATT DIODE NOISE.KUVAS RL.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 397-406; BIBL. 18 REF.Conference Paper

AIRBORNE RADAR APPLICATIONS FOR SOLID STATE MICROWAVE DIODE SOURCES.MCQUIDDY DN; HASTY TE.sdIN: MICROWAVE SEMICOND. DEVICES, CIRCUITS APPL. PROC. 4TH BIENN. CORNELL ELECTR. ENG. CONF.; ITHACA, N.Y.; 1973; ITHACA, N.Y.; CORNELL UNIV.; DA. S.D.; PP. 43-52; BIBL. 1 REF.Conference Paper

DOUBLE-DIFFUSED IMPATT DIODES WITHOUT SUBSTRATE FOR X-BAND FREQUENCIES.FREYER J.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 419-420; BIBL. 6 REF.Article

SILICON IMPATT DIODE DEVICE INCORPORATING A DIAMOND HEAT SINK.NAGAO H; KATAYAMA S.1974; N.E.C. RES. DEVELOP.; JAP.; DA. 1974; NO 35; PP. 67-76; BIBL. 5 REF.Article

BULK BREAKDOWN IN MESA IMPATT STRUCTURES.DASCALU D; BREZEANU G; MARIN N et al.1974; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1974; VOL. 19; NO 5; PP. 571-573; H.T. 2; ABS. FR.; BIBL. 5 REF.Article

DETERMINATION OF IMPATT DIODE MULTIPLICATION AND SATURATION CURRENT FROM 300 MHZ NOISE MEASUREMENTS.BERENZ J; TOMASSINI M; LEE CA et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 407-418; BIBL. 10 REF.Conference Paper

MEASUREMENT OF SERIES RESISTANCE IN IMPATT DIODESADLERSTEIN MG; HOLWAY LH JR; CHU SLG et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 179-182; BIBL. 4 REF.Article

EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES.CONSTANT E; MIRCEA A; PRIBETICH J et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3934-3940; BIBL. 15 REF.Article

EFFECTS OF TUNNELING ON HIGH-EFFICIENCY IMPATT AVALANCHES DIODES.CHIVE M; CONSTANT E; LEFEBVRE M et al.1975; PROC. I.E.E.E.; U.S.A.; DA. 1975; VOL. 63; NO 5; PP. 824-826; BIBL. 4 REF.Article

INVESTIGATION OF PARASITIC OSCILLATIONS IN IMPATT-DIODE OSCILLATORS BY A SIMPLE LOCUS CHART.GOEDBLOED JJ.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 3; PP. 54-56; BIBL. 7 REF.Article

GROSSSIGNALMODELL FUER DIE IMPATT-DIODE. = MODELE DE DIODE IMPATT POUR SIGNAL FORTKREMER R.1975; ARCH. ELEKTRON. UBERTRAG.-TECH.; DTSCH.; DA. 1975; VOL. 29; NO 9; PP. 361-366; ABS. ANGL.; BIBL. 6 REF.Article

REFLEXIONS SUR LES STRUCTURES HYPERFREQUENCES A PROFILS CONTROLES.MARIN BH.1975; ELECTR. ELECTRON. MOD.; FR.; DA. 1975; VOL. 45; NO 283; PP. 17-23 (6P.); BIBL. 16 REF.Article

ZUR MODULIERBARKEIT VON IMPATT-DIODEN-VERSTAERKERN. = SUR LA POSSIBILITE DE MODULER DES AMPLIFICATEURS A DIODES IMPATTLANDSTORFER F; HELLER M.1974; NACHR.-TECH. Z.; DTSCH.; DA. 1974; VOL. 27; NO 9; PP. 356-358; ABS. ANGL.; BIBL. 5 REF.Article

Etude de la concurrence des oscillations dans les générateurs à diodes de transit à avalancheTOROPIN, V. A.Radiotehnika i èlektronika. 1988, Vol 33, Num 11, pp 2327-2331, issn 0033-8494Article

Time-domain modeling of IMPATT oscillatorsGOELLER, T; KAERTNER, F. X.IEEE transactions on circuits and systems. 1989, Vol 36, Num 7, pp 988-996, issn 0098-4094, 9 p.Article

SIMULATION NUMERIQUE DE LA CARACTERISTIQUE DES DIODES IMPATTDATIEV KM.1979; ACTA PHYS. CHEM.; HUN; DA. 1979; VOL. 25; NO 1-2; PP. 23-28; ABS. ENG; BIBL. 5 REF.Article